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On the origin of dislocation generation and annihilation in alpha-Ga2O3 epilayers on sapphire

Document Type

Journal

Author

Ma, T. C.; Chen, X. H.; Kuang, Y.; Li, L.; Li, J.; Kremer, F.; Ren, F. -F.; Gu, S. L.; Zhang, R.; Zheng, Y. D.; Tan, H. H.; Jagadish, C.; Ye, J. D.

Source

APPLIED PHYSICS LETTERS; OCT 28 2019, 115 18, p182101 5p.

Subject

Language

English

ISSN

10773118

Online Access

Full Text (AIP) Web of Science JCR 저널정보 Scopus Find it@PNU

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