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Epitaxial growth properties of Si and SiGe films prepared by ion beam sputtering process

Document Type

Article

Author

Sasaki, K ; Nagai, H; Hata, T

Source

In Vacuum 2000 59(2):397-402

Subject

Language

ISSN

0042-207X

Online Access

Full Text (ScienceDirect) Web of Science JCR 저널정보 Scopus Find it@PNU

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