e-Article
Large Memory Window Antifuse HfO-Based One-Resistor and One-OTP NVMs Featuring Excellent Disturbance Tolerance and Robust 200 °c Retention
Document Type
Article
Author
Source
In: IEEE Transactions on Electron Devices . (IEEE Transactions on Electron Devices, 1 April 2024, 71(4):2824-2829)
Subject
Language
English
ISSN
15579646
00189383
00189383