e-Article
Thermocompression bonding effects on bump-pad adhesion
Document Type
Periodical
Source
IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part B IEEE Trans. Comp., Packag., Manufact. Technol. B Components, Packaging, and Manufacturing Technology, Part B: Advanced Packaging, IEEE Transactions on. 18(1):192-200 Feb, 1995
Subject
Language
ISSN
1070-9894
1558-3686
1558-3686
Abstract
In the wafer bumping process, metal bumps are deposited on aluminum pads and are later used to bond the silicon die to the I/O connections. The bump strength is important for the mechanical integrity and overall reliability of the interconnect. In this paper the effects of the following thermocompression bonding parameters on the bump-pad adhesion of TAB (tape automated bonding) bonds are experimentally determined and analytically explained: thermode temperature, base temperature, bonding pressure, and bonding duration. Experiments were performed on a 328-lead TAB device (gold bump on 4-mil pitch) and were based upon a 4-parameter, 3-level, Taguchi orthogonal array. The experimental results are compared with results obtained from finite element analyses. A consistent increase in the bump strength was observed after thermocompression bonding. Applied thermode pressure and bonding duration were found to be the most significant parameters that affect bump-pad adhesion.ETX