부산대학교 도서관

High critical field ( ${E}_{c}$ ) and low specific ON-resistance ( ${R}_{ON}$ ) $\beta $ -Ga2O3 devices such as accumulation channel metal-oxide-semiconductor field-effect-transistors (MOSFET) have been reported for high-power and extreme environment applications. Channel carrier mobility is a critical factor to reduce ${R}_{ON}$ , but a lack of studies on channel mobility in $\beta $ -Ga2O3 MOSFETs hinders understanding the electrical characteristics. We study carrier mobility in the channels with various doping concentrations using MOS-gated Hall measurements. Our MOSFET achieves a record-high peak channel mobility ( $\mu _{peak}$ ) of 143 cm2/ $\text{V}\cdot \text{s}$ , to the best of our knowledge. Moreover, we suggest that further improvements can be made by enhancing Coulomb scattering-limited mobility ( $\mu _{C}$ ).