e-Article
Detrimental effects limiting the performances of InP HEMT-based OEICs
Document Type
Conference
Author
Source
Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials Indium phosphide and related materials Indium Phosphide and Related Materials, 1997., International Conference on. :161-164 1997
Subject
Language
ISSN
1092-8669
Abstract
An investigation has been carried out on InAlAs/InGaAs HEMTs dedicated to monolithic optoelectronic integrated circuits (OEICs) for receiver as well as transmitter applications. The monolithic integration on InP semi-insulating substrates can be penalized by several parasitic effects related to trapping/detrapping mechanisms originated in the substrate and/or buffer layers. These parasitics have been studied in three MBE-grown HEMT structures, one of them previously demonstrated as efficient in the reduction of the gate current induced by an impact ionisation mechanism developing in the InGaAs channel layer.