e-Article
InGaAsN as absorber in APDs for 1.3 micron wavelength applications
Document Type
Conference
Author
Source
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Indium Phosphide & Related Materials (IPRM), 2010 International Conference on. :1-4 May, 2010
Subject
Language
ISSN
1092-8669
Abstract
Two issues with using InGaAsN as absorber in avalanche photodiodes (APDs) for 1310nm wavelength applications are addressed here. Firstly, we demonstrated InGaAsN p-i-n diodes with stable photoresponse around 1310nm but reverse leakage current density slightly above the acceptable limit of ~0.2mA/cm 2 at 150kV/cm. We also investigated whether or not InGaAsN as absorber is compatible with Al 0.8 Ga 0.2 As (the proposed avalanche material in our separate-absorption-multiplication APD design) in terms of the relationship between α and β in InGaAsN. Our observations suggest α ~ β in InGaAsN, making it compatible with Al 0.8 Ga 0.2 As.