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e-Article

Effect of Electrode Material on the Polarization Switching Kinetics of Hf0.5Zr0.5O2 Film
Document Type
Periodical
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 44(9):1440-1443 Sep, 2023
Subject
Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Switches
Electrodes
Kinetic theory
Tin
Capacitors
Pulse measurements
Grain size
Ferroelectrics
Hafnium zirconium oxide
ferroelectric memory
domain dynamics
Language
ISSN
0741-3106
1558-0563
Abstract
Electrode materials can significantly impact the chemical and physical properties and polarization switching kinetics of ferroelectric Hf0.5Zr0.5O2 (HZO) films deposited through atomic layer deposition. In this study, the effect of various electrode materials (TiN, Mo, and W) on the microstructure and polarization switching properties of HZO films is investigated. The nucleation-limited switching model indicates that the Mo electrode is beneficial in the case of small device-to-device variation, whereas W and TiN electrodes are advantageous for accomplishing high-speed operations.