부산대학교 도서관

The disadvantage of 4H-SiC/SiO 2 compared to the Si/SiO 2 interface is the high trap density limiting the channel mobility and gate oxide stability and often leads to early failure in power MOSFETs. One important process improvement is the nitridation of the oxide. In this work, we investigate techniques to characterize and quantify the nitridation effect, validating the better performance after NO nitridation due to passivation of near interface oxide traps (NIOTs) and bulk charges as well as an improved gate oxide reliability.