e-Article
FIB sample preparation for TEM failure analysis of advanced devices
Document Type
Conference
Author
Source
2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the. :1-5 Jul, 2010
Subject
Language
ISSN
1946-1542
1946-1550
1946-1550
Abstract
With continuous scaling in transistor size, there is demand to develop advanced FIB techniques for TEM failure analysis. Two techniques are reported here: 1) consecutive planar-cross section sample preparation for dual-direction TEM analysis and, 2) enhanced coating method for photo resists profile evaluation. Both the techniques have been successfully applied on deep sub-micron device issues which are difficult for the conventional FIB methods.