e-Article
185mW InP HBT Power Amplifier with 1 Octave Bandwidth (2550GHz), 38% peak PAE at 44GHz and Chip Area of 276 x 672 μm2
Document Type
Conference
Author
Source
2019 IEEE MTT-S International Microwave Symposium (IMS) Microwave Symposium (IMS), 2019 IEEE MTT-S International. :1303-1305 Jun, 2019
Subject
Language
ISSN
2576-7216
Abstract
We report a 250nm InP HBT MMIC that demonstrates record output power at 44 GHz for its chip size, having a small signal bandwidth of 25 - 50 GHz, and operating from a 2.5-2.8 V supply. The reported power amplifier delivers up to 185 mW and has a peak PAE of 38% at 44 GHz. The results in this work highlight the relevance of 250nm InP HBT devices for emerging size-constrained platforms including MIMO communication front-ends and radar applications.