e-Article
SmartSiC™ for Manufacturing of SiC Power Devices
Document Type
Conference
Author
Daval, N.; Drouin, A.; Biard, H.; Viravaux, L.; Radisson, D.; Rouchier, S.; Gaudin, G.; Widiez, J.; Allibert, F.; Rolland, E.; Vladimirova, K.; Gelineau, G.; Troutot, N.; Navone, C.; Berre, G.; Bosch, D.; Leow, Y.L; Duboust, A.; Bethoux, J-M.; Boulet, R.; Chapelle, A.; Cela, E.; Lavaitte, G.; Bouville-Lallart, A.; Bhargava, S.; Schwarzenbach, W.; Maddalon, C.; Radu, I.; Odoul, S.; Delprat, D.; Bonnin, O.; Maleville, C.
Source
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2022 6th IEEE. :85-87 Mar, 2022
Subject
Language
Abstract
SmartSiC™ is an alternative to SiC bulk substrate, with ideal characteristics to manufacture SiC Power devices, together with an excellent carbon footprint. SmartSiC substrates will soon be manufactured in high volume. In order to be ready for this, key technical development items were needed to deliver the product performance, which are reported here.