e-Article
The effect of structural parameters on AlGaN solar-blind metal–semiconductor-metal (MSM) photodetectors.
Document Type
Article
Author
Source
Subject
*PHOTODETECTORS
*ACTION spectrum
*BREAKDOWN voltage
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Language
ISSN
0306-8919
Abstract
We have successfully fabricated the AlGaN-based solar blind ultraviolet (UV) metal–semiconductor–metal (MSM) photodetectors with a high Al-content of 0.6. The photodetectors exhibit a cutoff wavelength of ~ 250 nm corresponding to the bandgap of Al0.6Ga0.4 N. Moreover, a comparative study on the Al0.6Ga0.4 N MSM photodetectors with different structural parameters (active area, finger/spacing size) at room- and high-temperature has been conducted. The effect of the structural parameters on the breakdown voltages, spectral responsivity, dark- and photo-current of Al0.6Ga0.4 N MSM solar-blind UV photodetectors has been systematically explored. [ABSTRACT FROM AUTHOR]