학술논문
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
Document Type
Conference
Author
Xie, R.; Montanini, P.; Akarvardar, K.; Tripathi, N.; Haran, B.; Johnson, S.; Hook, T.; Hamieh, B.; Corliss, D.; Wang, J.; Miao, X.; Sporre, J.; Fronheiser, J.; Loubet, N.; Sung, M.; Sieg, S.; Mochizuki, S.; Prindle, C.; Seo, S.; Greene, A.; Shearer, J.; Labonte, A.; Fan, S.; Liebmann, L.; Chao, R.; Arceo, A.; Chung, K.; Cheon, K.; Adusumilli, P.; Amanapu, H.P.; Bi, Z.; Cha, J.; Chen, H.-C.; Conti, R.; Galatage, R.; Gluschenkov, O.; Kamineni, V.; Kim, K.; Lee, C.; Lie, F.; Liu, Z.; Mehta, S.; Miller, E.; Niimi, H.; Niu, C.; Park, C.; Park, D.; Raymond, M.; Sahu, B.; Sankarapandian, M.; Siddiqui, S.; Southwick, R.; Sun, L.; Surisetty, C.; Tsai, S.; Whang, S.; Xu, P.; Xu, Y.; Yeh, C.; Zeitzoff, P.; Zhang, J.; Li, J.; Demarest, J.; Arnold, J.; Canaperi, D.; Dunn, D.; Felix, N.; Gupta, D.; Jagannathan, H.; Kanakasabapathy, S.; Kleemeier, W.; Labelle, C.; Mottura, M.; Oldiges, P.; Skordas, S.; Standaert, T.; Yamashita, T.; Colburn, M.; Na, M.; Paruchuri, V.; Lian, S.; Divakaruni, R.; Gow, T.; Lee, S.; Knorr, A.; Bu, H.; Khare, M.
Source
2016 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2016 IEEE International. :2.7.1-2.7.4 Dec, 2016
Subject
Language
ISSN
2156-017X
Abstract
We present a 7nm technology with the tightest contacted poly pitch (CPP) of 44/48nm and metallization pitch of 36nm ever reported in FinFET technology. To overcome optical lithography limits, Extreme Ultraviolet Lithography (EUV) has been introduced for multiple critical levels for the first time. Dual strained channels have been also implemented to enhance mobility for high performance applications.