학술논문
A 45 nm CMOS node Cu/Low-k/ Ultra Low-k PECVD SiCOH (k=2.4) BEOL Technology
Document Type
Conference
Author
Sankaran, S.; Arai, S.; Augur, R.; Beck, M.; Biery, G.; Bolom, T.; Bonilla, G.; Bravo, O.; Chanda, K.; Chae, M.; Chen, F.; Clevenger, L.; Cohen, S.; Cowley, A.; Davis, P.; Demarest, J.; Doyle, J.; Dimitrakopoulos, C.; Economikos, L.; Edelstein, D.; Farooq, M.; Filippi, R.; Fitzsimmons, J.; Fuller, N.; Gates, S. M.; Greco, S. E.; Grill, A.; Grunow, S.; Hannon, R.; Ida, K.; Jung, D.; Kaltalioglu, E.; Kelling, M.; Ko, T.; Kumar, K.; Labelle, C.; Landis, H.; Lane, M.W.; Landers, W.; Lee, M.; Li, W.; Liniger, E.; Liu, X.; Lloyd, J. R.; Liu, W.; Lustig, N.; Malone, K.; Marokkey, S.; Matusiewicz, G.; McLaughlin, P. S.; McLaughlin, P. V.; Mehta, S.; Melville, I.; Miyata, K.; Moon, B.; Nitta, S.; Nguyen, D.; Nicholson, L.; Nielsen, D.; Ong, P.; Patel, K.; Patel, V.; Park, W.; Pellerin, J.; Ponoth, S.; Petrarca, K.; Rath, D.; Restaino, D.; Rhee, S.; Ryan, E.T.; Shoba, H.; Simon, A.; Simonyi, E.; Shaw, T.M.; Spooner, T.; Standaert, T.; Sucharitaves, J.; Tian, C.; Wendt, H.; Werking, J.; Widodo, J.; Wiggins, L.; Wisnieff, R.; Ivers, T.
Source
2006 International Electron Devices Meeting Electron Devices Meeting, 2006. IEDM '06. International. :1-4 Dec, 2006
Subject
Language
ISSN
0163-1918
2156-017X
2156-017X
Abstract
A high performance 45nm BEOL technology with proven reliability is presented. This BEOL has a hierarchical architecture with up to 10 wiring levels with 5 in PECVD SiCOH (k=3.0), and 3 in a newly-developed advanced PECVD ultralow-k (ULK) porous SiCOH (k=2.4). Led by extensive circuit performance estimates, the detrimental impact of scaling on BEOL parasitics was overcome by strategic introduction of ULK at 2x wiring levels, and increased 1x wire aspect ratios in low-k, both done without compromising reliability. This design point maximizes system performance without adding significant risk, cost or complexity. The new ULK SiCOH film offers superior integration performance and mechanical properties at the expected k-value. The dual damascene scheme (non-poisoning, homogeneous ILD, no trench etch-stop or CMP polish-stop layers) was extended from prior generations for all wiring levels. Reliability of the 45 nm-scaled Cu wiring in both low-k and ULK levels are proven to meet the criteria of prior generations. Fundamental solutions are implemented which enable successful ULK Chip-Package Interaction (CPI) reliability, including in the most aggressive organic flip-chip FCPBGA packages. This represents the first successful implementation of Cu/ULK BEOL to meet technology reliability qualification criteria.