학술논문

$1.62\mu \mathrm{m}$ Global Shutter Quantum Dot Image Sensor Optimized for Near and Shortwave Infrared
Document Type
Conference
Source
2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :23.4.1-23.4.4 Dec, 2021
Subject
Components, Circuits, Devices and Systems
Image sensors
Electric potential
Quantum dots
Infrared imaging
Lead
Robustness
Manufacturing
Language
ISSN
2156-017X
Abstract
We have developed a $1.62\mu \mathrm{m}$ pixel pitch global shutter sensor optimized for imaging in the near infrared (NIR) and shortwave infrared (SWIR) regions of the light spectrum. This breakthrough was made possible through the use of our colloidal Quantum Dot (QD) thin film technology, which we have named Quantum Film (QF). We have scaled up this new platform technology to our 300mm manufacturing toolset. The challenges associated with the introduction of solution-processed, colloidally grown lead sulfide (PbS) QDs in an industrial 300mm fab environment were successfully overcome. The QF photodiodes, leveraging either NIR or SWIR sensitive QDs, were optimized for high quantum efficiency (QE), low dark current and immunity to operating stress. Global shutter pixel arrays, with pixel pitch of $2.2\mu \mathrm{m}$ and $1.62\mu \mathrm{m}$ exhibit unprecedented QE of >50% and MTF @ Nyquist/2 of 0.75 and 0.6, respectively. The robustness of our 300mm Quantum Film technology was fully assessed and reliability in terms of meeting all required lifetime specifications for consumer electronics and other potential applications has been demonstrated.