학술논문

Multi-MGy Total Ionizing Dose Induced MOSFET Variability Effects on Radiation Hardened CMOS Image Sensor Performances
Document Type
Conference
Source
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Radiation and Its Effects on Components and Systems (RADECS), 2017 17th European Conference on. :1-4 Oct, 2017
Subject
Aerospace
Components, Circuits, Devices and Systems
Nuclear Engineering
Photonics and Electrooptics
Robotics and Control Systems
MOSFET
Degradation
Voltage measurement
Total ionizing dose
Radiation hardening (electronics)
ITER
CMOS Image Sensors
CIS
Fixed Pattern Noise
FPN
Total Ionizing Dose
TID
Readout chain
Radiation Effects
Language
ISSN
1609-0438
Abstract
MOSFETs variability in irradiated CIS up to 10 MGy(SiO 2 ) is statistically investigated on about 65000 devices. Different variability sources are identified and the role played by the transistors composing the readout chain is clarified.