학술논문
Reliability failure modes in interconnects for the 45 nm technology node and beyond
Document Type
Conference
Author
Source
2009 IEEE International Interconnect Technology Conference Interconnect Technology Conference, 2009. IITC 2009. IEEE International. :179-181 Jun, 2009
Subject
Language
ISSN
2380-632X
2380-6338
2380-6338
Abstract
This work analyses electromigration and dielectric lifetimes of 45 nm node CMOS interconnects. Reliability mechanisms and failure modes are discussed considering, on one hand, the interconnect materials and processes steps, and on the other hand scaling issues. Robust reliability performance meeting the required products target is actually obtained with process integration schemes used for the 45 nm node thanks to fine optimizations of Cu barriers, Cu filling, and ULK surface quality.