학술논문
Demonstration of TFHM scalability to 32 nm node BEOL interconnect and extendibility to ELK k ≤ 2.3 dielectric material
Document Type
Conference
Author
Source
2009 IEEE International Interconnect Technology Conference Interconnect Technology Conference, 2009. IITC 2009. IEEE International. :155-156 Jun, 2009
Subject
Language
ISSN
2380-632X
2380-6338
2380-6338
Abstract
A 32 nm node BEOL demonstrator using Trench First Hard Mask (TFHM) architecture is realized. The dual damascene process is performed with ELK dielectric at line and via level and with an adapted metallization in order to meet ITRS specifications. ELK k=2.3 & k=2.2 are studied in a TFHM architecture in order to prove its extendibility to ELK dielectric materials.