학술논문
3D sequential integration with Si CMOS stacked on 28nm industrial FDSOI with Cu-ULK iBEOL featuring RO and HDR pixel
Document Type
Conference
Author
Mota-Frutuoso, T.; Lapras, V.; Brunet, L.; Basset, L.; Lugo, J.; Fenouillet-Beranger, C.; Vinet, M.; Lattard, D.; Boulard, F.; Exbraya, Y.; Boutry, D.; Billoint, O.; Bosch, D.; Maneglia, Y.; Peizerat, A.; Dumas, S.; Sicard, G.; Kerdiles, S.; Kanyandekwe, J.; Sideris, P.; Mazzocchi, V.; Sarrazin, A.; Loup, V.; Mauguen, G.; Morales, C.; Alba, P. Acosta; Balan, V.; Perrot, C.; Sturm, J.; Euvrard, C.; Aussenac, F.; Janaud, A.; Chapon, J-D.; Guillermet, M.; Guglieri, S.; Bailly, F.; Toresani, P.; Fournel, F.; Mouhdach, M.; Berthoud, A.; Chapelon, L-L.; Ribotta, M.; Ponthenier, F.; Magalhaes, A.; Maitrejean, S.; Moulin, C.; Michailos, J.; Arnaud, F.; Cathelin, A.; Arcamone, J.; Andrieu, F.; Garros, X.; Gaillard, F.; Batude., P.
Source
2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023
Subject
Language
ISSN
2156-017X
Abstract
This work demonstrates for the first time the 3D sequential integration of CMOS over CMOS with advanced metal line levels (28nm Cu + ULK). The bottom tier consists of a 28nm FDSOI industrial wafer with 4 metal lines. A bevel contamination wrap module allows the return of the wafer to Front End Of Line (FEOL) environment required for achieving high performance top FET Si CMOS processing. Additionally the doped poly-Si ground plane introduced enables top FET dynamic back-biasing and effective DC and HF isolation with underlying metal lines. Finally, this 3DSI platform demonstrates functional top, bottom, and 3D ring oscillators as well as a pixel with single exposure flicker-free High Dynamic Range capability obtained thanks to the stacking of an additional circuit over a bottom 3T-pixel.