학술논문
Impact of a 10 nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32 nm node and below
Document Type
Article
Author
Fenouillet-Beranger, C.; Perreau, P.; Denorme, S.; Tosti, L.; Andrieu, F.; Weber, O.; Monfray, S.; Barnola, S.; Arvet, C.; Campidelli, Y.; Haendler, S.; Beneyton, R.; Perrot, C.; de Buttet, C.; Gros, P.; Pham-Nguyen, L.; Leverd, F.; Gouraud, P.; Abbate, F.; Baron, F.; Torres, A.; Laviron, C.; Pinzelli, L.; Vetier, J.; Borowiak, C.; Margain, A.; Delprat, D.; Boedt, F.; Bourdelle, K.; Nguyen, B.-Y.; Faynot, O.; Skotnicki, T.
Source
In Solid State Electronics 2010 54(9):849-854
Subject
Language
ISSN
0038-1101