학술논문
Opportunities and challenges brought by 3D-sequential integration
Document Type
Conference
Author
Batude, P.; Brunet, L.; Fenouillet-Beranger, C.; Lattard, D.; Andrieu, F.; Vinet, M.; Brevard, L.; Ribotta, M.; Previtali, B.; Tabone, C.; Ponthenier, F.; Rambal, N.; Sideris, P.; Garros, X.; Casse, M.; Theodorou, C.; Sklenard, B.; Lacord, J.; Besson, P.; Fournel, F.; Kerdiles, S.; Acosta-Alba, P.; Mazzocchi, V.; Hartmann, J-M.; Mazen, F.; Thuries, S.; Billoint, O.; Vivet, P.; Sicard, G.; Cibrario, G.; Mouhdach, M.; Giraud, B.; Ribotta, CM.; Lapras, V.
Source
2021 IEEE International Interconnect Technology Conference (IITC) Interconnect Technology Conference (IITC), 2021 IEEE International. :1-1 Jul, 2021
Subject
Language
ISSN
2380-6338
Abstract
The aim of this paper is to present the 3D-sequential integration and its main prospective application sectors. The presentation will also give a synoptic view of all the key enabling process steps required to build high performance Si CMOS integrated by 3D-sequential with thermal budget preserving the integrity of active devices and interconnects and will sketch a status and prospect on current low temperature device performance.