학술논문
Comparative Scalability of PVD and CVD TiN on HfO2 as a Metal Gate Stack for FDSOI cMOSFETs down to 25nm Gate Length and Width
Document Type
Conference
Author
Andrieu, F.; Faynot, O.; Garros, X.; Lafond, D.; Buj-Dufournet, C.; Tosti, L.; Minoret, S.; Vidal, V.; Barbe, J.C.; Allain, F.; Rouchouze, E.; Vandroux, L.; Cosnier, V.; Casse, M.; Delaye, V.; Carabasse, C.; Burdin, M.; Rolland, G.; Guillaumot, B.; Colonna, J.P.; Besson, P.; Brevard, L.; Mariolle, D.; Holliger, P.; Vandooren, A.; Fenouillet-Beranger, C.; Martin, F.; Deleonibus, S.
Source
2006 International Electron Devices Meeting Electron Devices Meeting, 2006. IEDM '06. International. :1-4 Dec, 2006
Subject
Language
ISSN
0163-1918
2156-017X
2156-017X
Abstract
This paper compares, for the first time, the scalability of Physical- and Chemical-Vapor-Deposited (PVD and CVD) TiN on HfO2 as a gate stack for FDSOI cMOSFETs down to 25nm gate length and width. It is shown that not only the intrinsic material properties but also the device architecture strongly influences the final gate stack properties. Reliability issues, stress and gate control in the sub-35nm scale are reported and explained, thanks to material, electric data and mechanical simulations. In spite of its lower performance on large device dimensions, PVD-TiN demonstrates a better overall trade-off, leading to a 17% ION improvement on 25nm short and narrow devices.