학술논문
65nm RFSOI Power Amplifier Transistor Ageing at mm W frequencies, 14 GHz and 28 GHz
Document Type
Conference
Author
Source
2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :39.3.1-39.3.4 Dec, 2021
Subject
Language
ISSN
2156-017X
Abstract
RF performance and reliability of Stand-Alone (SA) MOS devices and stacked Power Amplifier (PA) cells have been deeply investigated. Ageing of device DC and RF large signal performance is very well modelled considering V T & R d drift due to Hot Carrier Injection (HCI). The PA transistor presents also a very good immunity against TDDB when operating under most of RF 5G modulations signals. Interstacked PA cell offers better trade-off performance vs reliability than Stacked and SA devices.