학술논문
A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles
Document Type
Conference
Author
Source
2024 IEEE International Reliability Physics Symposium (IRPS) International Reliability Physics Symposium (IRPS), 2024 IEEE. :4B.2-1-4B.2-6 Apr, 2024
Subject
Language
ISSN
1938-1891
Abstract
A simplified methodology to link CW (Continuous Wave) RF stresses to complex mission profiles is presented in order to compare the lifetimes of different 40nm PDSOI Power Amplifier (PA) cells, versus bias and under different 5G-FR2 modulation profiles. The best lifetime is achieved when using the most complex 5G modulation due to output power/linearity constraints. VT drift correction is also identified as a powerful tool to increase transistor HCI lifetime under PA operation.