부산대학교 도서관

The understanding of self-heating effects and heat dissipation in semiconductor devices is a necessary element for the accurate modeling and prediction of reliability indicators. Unfortunately, the small dimensions, the complex device structures, and the presence of thin-oxidized interfacial layers make it impractical to determine these quantities experimentally. In this work, we calculate electrical conductances ( ${\sigma }$ ), electronic thermal conductances ( ${k}$ ), and their respective Lorenz numbers [ $\text {L}={k}/{(}\sigma {T}\,{)}$ ], for materials and relevant interfaces at the BEOL and MOL levels in advanced CMOS technologies. We progress from bulk to pure metal interfaces to realistically oxidized interfaces, and find the model works well, enabling a physical understanding of the impacts of oxidation, unavoidable in high-volume manufacturing. We find that Wiedemann–Franz (W–F) law applies very well for these metallic interfaces with Lorenz numbers being close to the bulk counterpart. We also find that interface oxidation exponentially increases the interface resistances. This can readily enable thermal characterization of these interfaces through electrical measurements, allowing accurate self-heating modeling for FinFET and beyond technologies.