학술논문
Reliability of High Speed Photodetector for Silicon Photonic Applications
Document Type
Conference
Author
Source
2018 International Integrated Reliability Workshop (IIRW) Integrated Reliability Workshop (IIRW), 2018 International. :1-4 Oct, 2018
Subject
Language
ISSN
2374-8036
Abstract
In this paper, the reliability of germanium photodiodes of the PIC25G technology for silicon photonic applications is experimentally studied. Using advanced characterization technics, it is shown that the dark current, the photonic current and the cut-off frequency of the photodiode can be degraded during voltage stress of 10 6 s, which could ultimately induce some device performance drift. The causes of these degradations are presently attributed to interface defects between germanium and SiO 2 , until more detailed investigation are pursued.