학술논문
Microstructure modulation for resistance reduction in copper interconnects
Document Type
Conference
Author
Source
2017 IEEE International Interconnect Technology Conference (IITC) Interconnect Technology Conference (IITC), 2017 IEEE International. :1-3 May, 2017
Subject
Language
ISSN
2380-6338
Abstract
Microstructure variation with post-patterning dielectric aspect ratio (AR) and post-plating annealing temperature has been investigated in Cu narrow wires. As compared to the conventional annealing at 100 ◦C for a feature AR of 2.6, both elevated temperature anneals and reduced AR structures modulated Cu microstructure, which then resulted in a reduced rate of electrical resistivity increase with area scaling and an increased electromigration resistance in the Cu narrow wires.