학술논문
BEOL process integration for the 7 nm technology node
Document Type
Conference
Author
Standaert, T.; Beique, G.; Chen, H.-C.; Chen, S.-T.; Hamieh, B.; Lee, J.; McLaughlin, P.; McMahon, J.; Mignot, Y.; Mont, F.; Motoyama, K.; Nguyen, S.; Patlolla, R.; Peethala, B.; Priyadarshini, D.; Rizzolo, M.; Saulnier, N.; Shobha, H.; Siddiqui, S.; Spooner, T.; Tang, H.; van der Straten, O.; Verduijn, E.; Xu, Y.; Zhang, X.; Arnold, J.; Canaperi, D.; Colburn, M.; Edelstein, D.; Paruchuri, V.; Bonilla, G.
Source
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC) Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2016 IEEE International. :2-4 May, 2016
Subject
Language
ISSN
2380-6338
Abstract
A 36 nm pitch BEOL has been evaluated for the 7 nm technology node. EUV lithography was employed as a single-exposure patterning solution. For the first time, it is shown that excellent reliability results can be obtained for Cu interconnects at these small dimensions, by using a TaN/Ru barrier system and a selective Co cap.