학술논문
Electromigration extendibility of Cu(Mn) alloy-seed interconnects, and understanding the fundamentals
Document Type
Conference
Author
Nogami, T.; Penny, C.; Madan, A.; Parks, C.; Li, J.; Flaitz, P.; Uedono, A.; Chiang, S.; He, M.; Simon, A.; Bolom, T.; Ryan, T.; Ito, F.; Christiansen, C.; Tai, L.; Hu, C-K.; Kim, H.; Zhang, X.; Tanwar, K.; Choi, S.; Baumann, F.; Davis, R.; Kelly, J.; Murphy, R.; Molis, S.; Rowland, J.; Dehaven, P.; Canaperi, D.; Spooner, T.; Edelstein, D.
Source
2012 International Electron Devices Meeting Electron Devices Meeting (IEDM), 2012 IEEE International. :33.7.1-33.7.4 Dec, 2012
Subject
Language
ISSN
0163-1918
2156-017X
2156-017X
Abstract
Cu(Mn) alloy seed BEOL studies revealed fundamental insights into Mn segregation and EM enhancement. We found a metallic-state Mn-rich Cu layer under the MnOx layer at the Cu/SiCNH cap interface, and correlated this metallic layer with additional EM enhancement. A carbonyl-based CVD-Co liner film consumed Mn, reducing its segregation and EM benefit, suggesting O-free Co liner films are strategic for Cu-alloy seed extendibility.