학술논문
CVD Co and its application to Cu damascene interconnections
Document Type
Conference
Author
Nogami, T.; Maniscalco, J.; Madan, A.; Flaitz, P.; DeHaven, P.; Parks, C.; Tai, L.; Lawrence, B. St.; Davis, R.; Murphy, R.; Shaw, T.; Cohen, S.; Hu, C-K.; Cabral, C.; Chiang, S.; Kelly, J.; Zaitz, M.; Schmatz, J.; Choi, S.; Tsumura, K.; Penny, C.; Chen, H-C.; Canaperi, D.; Vo, T.; Ito, F.; Straten, O.; Simon, A.; Rhee, S-H.; Kim, B-Y.; Bolom, T.; Ryan, V.; Ma, P.; Ren, J.; Aubuchon, J.; Fine, J.; Kozlowski, P.; Spooner, T.; Edelstein, D.
Source
2010 IEEE International Interconnect Technology Conference Interconnect Technology Conference (IITC), 2010 International. :1-3 Jun, 2010
Subject
Language
ISSN
2380-632X
2380-6338
2380-6338
Abstract
Fundamental material interactions as pertinent to nano-scale copper interconnects were studied for CVD Co with a variety of micro-analytical techniques. Native Co oxide grew rapidly within a few hours (XPS). Incorporation of oxygen and carbon in the CVD Co films (by AES and SIMS) depended on underlying materials, such as Ta, TaN, or Ru. Copper film texture (by XRD) and agglomeration resistance (by AFM) showed correlations with amounts of in-film oxygen/carbon. Cobalt diffused through copper at normal processing temperatures (by SIMS). CVD Co demonstrated diffusion barrier performance to Cu (by Triangular Voltage Sweep, TVS), but not to O 2 . CVD Co was applied to 32 nm/22 nm damascene Cu interconnect fabrication in a scheme defined by the material studies. Lower post-CMP defect density and longer electromigration lifetimes were obtained.