학술논문
Sub-20 nm abrupt USJ formation with long ms-flash with sub-2 nm dopant motion control
Document Type
Conference
Author
Source
2010 International Workshop on Junction Technology Extended Abstracts Junction Technology (IWJT), 2010 International Workshop on. :1-5 May, 2010
Subject
Language
Abstract
A new combination of long millisecond (1–2.5 ms) flash anneal at high peak temperature(1200–1300°C) and a new absorber with low deposition temperature (