학술논문
Investigation of the impact of CoWp self-aligned barrier deposition on the porous siOC properties after a direct CMP process
Document Type
Conference
Author
Source
2008 International Interconnect Technology Conference Interconnect Technology Conference, 2008. IITC 2008. International. :126-128 Jun, 2008
Subject
Language
ISSN
2380-632X
2380-6338
2380-6338
Abstract
To reduce the capacitance and mimprove the reliability of metal interconnects at the 32 nm node and beyond, a promising approach is to use a direct CMP process stopping in the porous ultra-low k material combined with a metallicself-aligned CoWP capping layer. We demonstrate on 45 nm technology node wafers, that our self-aligned barrier layer process is compatible with the direct CMP process.