학술논문
High performance k=2.5 ULK backend solution using an improved TFHM architecture, extendible to the 45nm technology node
Document Type
Conference
Author
Fox, R.; Hinsinger, O.; Richard, E.; Sabouret, E.; Berger, T.; Goldberg, C.; Humbert, A.; Imbert, G.; Brun, P.; Ollier, E.; Maurice, C.; Guillermet, M.; Monget, C.; Plantier, V.; Bono, H.; Zaleski, M.; Mellier, M.; Jacquemin, J.-P.; Flake, J.; Sharma, B.G.; Broussous, L.; Farcy, A.; Arnal, V.; Gonella, R.; Maubert, S.; Girault, V.; Vannier, P.; Reber, D.; Schussler, A.; Mueller, J.; Besling, W.
Source
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :81-84 2005
Subject
Language
ISSN
0163-1918
2156-017X
2156-017X
Abstract
An enhanced trench first hard mask (TFHM) backend integration architecture has been developed to facilitate straightforward ultra low-k (ULK) material insertion and to enable rapid yield learning at the 65nm technology node. Parametric, yield, reliability, and RC performance data are presented for the fully-integrated, improved TFHM 300mm ULK backend