학술논문
Variation in natural threshold voltage of NVM circuits due to dopant fluctuations and its impact on reliability
Document Type
Conference
Author
Source
Digest. International Electron Devices Meeting, Electron devices meeting Electron Devices Meeting, 2002. IEDM '02. International. :529-532 2002
Subject
Language
Abstract
The statistical distribution of the natural threshold voltage (V/sub T0/) of 512k-bit NVM circuit arrays has been studied for two different technologies. The major source of the V/sub T0/ variation is dopant fluctuations of the NVM well. An analytical model for the dopant fluctuations provides excellent agreement with the measured circuit V/sub T0/ variation and NVM cell mismatch for both technologies. The reliability implications of the V/sub T0/ variation are considered using charge leakage models for data retention.