학술논문
40-nm RFSOI technology exhibiting 90fs RON × COFF and fT/fMAX of 250 GHz/350 GHz targeting sub-6 GHz and mmW 5G applications
Document Type
Conference
Author
Cremer, S.; Pelloux, N.; Gianesello, F.; Mourier, Y.; Haury, G.; de Albuquerque, T. Chaves; Monsieur, F.; Audouin, H.; Legrand, C. A.; Diouf, C.; Goncalves, J. Azevedo; Belem Goncalves, C.; Durand, C.; Vulliet, N.; Berthier, L.; Souchier, E.; Garcia, P.; Jan, S.; Hello, M.; Rellier, M. L.; Scheer, P.; Duriez, B.; Garros, X.; Bordignon, T.; Paillardet, F.; Chevalier, P.
Source
ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), ESSDERC 2023 - IEEE 53rd European. :101-104 Sep, 2023
Subject
Language
ISSN
2378-6558
Abstract
RF Front-End Modules (FEM) for both smartphones and infrastructure are today deployed thanks to several technologies (GaAs, GaN, LDMOS, SiGe and RFSOI). RFSOI technology has already completely replaced GaAs for RF switches integration, but due to its very good cost/performances trade-off, RFSOI technology is also a good candidate to enable RF FEM System On Chip (LNA, PA and RF Switch on the same die). We present in this paper the development on 300-mm wafer of a cost-optimized 40-nm PDSOI technology targeting 5G wireless networks from sub-6 GHz up to mmW frequencies. Elementary devices and circuits measurements are reviewed to illustrate achievable performances.