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Ultrathin (5 nm) SiGe-On-Insulator with high compressive strain (−2 GPa): From fabrication (Ge enrichment process) to in-depth characterizations

Document Type

Article

Author

Glowacki, F.; Le Royer, C.; Morand, Y.; Pédini, J.-M.; Denneulin, T.; Cooper, D.; Barnes, J.-P.; Nguyen, P.; Rouchon, D.; Hartmann, J.-M.; Gourhant, O.; Baylac, E.; Campidelli, Y.; Barge, D.; Bonnin, O.; Schwarzenbach, W.

Source

In Solid State Electronics July 2014 97:82-87

Subject

Language

ISSN

0038-1101

Online Access

Full Text (ScienceDirect) Web of Science JCR 저널정보 Scopus Find it@PNU

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