학술논문
Parasitic bipolar impact in 32 nm undoped channel Ultra-Thin BOX (UTBOX) and biased Ground Plane FDSOI high-k/metal gate technology
Document Type
Article
Author
Fenouillet-Beranger, C.; Perreau, P.; Boulenc, P.; Tosti, L.; Barnola, S.; Andrieu, F.; Weber, O.; Beneyton, R.; Perrot, C.; de Buttet, C.; Abbate, F.; Campidelli, Y.; Pinzelli, L.; Gouraud, P.; Margain, A.; Peru, S.; Bourdelle, K.K.; Nguyen, B.Y.; Boedt, F.; Poiroux, T.; Faynot, O.; Skotnicki, T.; Boeuf, F.
Source
In Solid State Electronics August 2012 74:32-37
Subject
Language
ISSN
0038-1101