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Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress

Document Type

Article

Author

Tan, H.T.; Gao, Y.; Syaranamual, G.J.; Sasangka, W.A.; Foo, S.C.; Lee, K.H.; Arulkumaran, S.; Ng, G.I.; Thompson, C.V.; Gan, C.L.

Source

In Microelectronics Reliability November 2023 150

Subject

Language

ISSN

0026-2714

Online Access

Full Text (ScienceDirect 종량제) Web of Science JCR 저널정보 Scopus Find it@PNU

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