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Interest of SiCO low k=4.5 spacer deposited at low temperature (400°C) in the perspective of 3D VLSI integration
Document Type
Conference Paper
Author
Benoit, D.; Chhun, S.; Lagrasta, S.; Gaumer, C.; Galpin, D.; Vo-Thanh, D.; Barge, D.; Duru, R.; Beneyton, R.; Hinsinger, O.; Mazurier, J.; Fenouillet-Beranger, C.; Varadarajan, B.; Gong, B.; Winandy, D.; Van Schravendijk, B.; Sun, N.; Chauvet, N.; Ruault, P.; Meijer, P.
Source
In: Technical Digest - International Electron Devices Meeting, IEDM, 2015 IEEE International Electron Devices Meeting, IEDM 2015. (Technical Digest - International Electron Devices Meeting, IEDM, 16 February 2015, 2016-February:8.6.1-8.6.4)
Subject
Language
English
ISSN
01631918

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