부산대학교 도서관

A performance upgrade of our 14nm FDSOI technology is reported in this paper. Compared to our previous 14nm FDSOI assessment, a −17% delay at the same leakage is demonstrated. We show that the AC performance of 28nm FDSOI at a 0.9V supply voltage is reached at 0.6V in 14nm FDSOI technology. This corresponds to a 50% increase in frequency at the same dynamic power, or a 65% power saving at the same operation frequency. The transistors are optimized to provide better drive current and, for the first time, a novel SiBCN low-k spacer material is successfully integrated in a gate-first FDSOI technology, providing a 10% reduction in gate-to-source/drain parasitic capacitance.