학술논문
In situ post etching treatment as a solution to improve defect density for porous low-k integration using metallic hard masks
Document Type
Conference
Author
Source
2009 IEEE International Interconnect Technology Conference Interconnect Technology Conference, 2009. IITC 2009. IEEE International. :240-242 Jun, 2009
Subject
Language
ISSN
2380-632X
2380-6338
2380-6338
Abstract
H 2 , O 2 , NH 3 and CH 4 in situ post-etching treatments (PET) have been investigated as a solution to prevent the residues formation (TiFx based) on TiN metallic hard mask (MHM) after etching in fluorocarbon based plasmas. The PET impact on the residues growth reduction on the mask and on the porous SiOCH modification is presented and discussed. The compatibility of the different PET is also evaluated for C045 dual damascene level using trench first MHM integration.