학술논문
Insight Into HCI Reliability on I/O Nitrided Devices
Document Type
Conference
Author
Source
2023 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2023 IEEE International. :1-5 Mar, 2023
Subject
Language
ISSN
1938-1891
Abstract
Hot carriers injection (HCI) degradation plays an important role in advanced technologies. We carried out an extensive analysis of this degradation mode on 55nm MOS transistors and showed that for large channel lengths, a stress at $V_{G}=V_{D}$ becomes more critical than at $V_{G}= V_{Gibmax}$ condition. This is imputable to an additional degradation mechanism distributed throughout the channel, which likely appears on nitrided samples.