학술논문
A Parametric Simulative Study for Si and SiC Semiconductor Devices Under Various Accelerated Testing Conditions Using Rate- and Temperature Dependent Inelastic Material Data
Document Type
Conference
Source
2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Thermal Investigations of ICs and Systems (THERMINIC), 2021 27th International Workshop on. :1-6 Sep, 2021
Subject
Language
ISSN
2474-1523
Abstract
The usage of wide-bandgap semiconductor material such as silicon carbide and gallium nitride for power modules in electric vehicle applications is accompanied by higher power densities and higher operating temperatures compared to standard power modules employing silicon-based technology. This demands for new packaging materials like sintered silver which is able to cope with the higher thermo-mechanical stress. Within this study, comparative finite element simulations for silicon and silicon carbide as die material are presented. In addition, the material data used is gained from tensile tests and the viscoplastic behavior of sintered silver is modeled with the Anand model.