학술논문
Impact of 45° rotated substrate on UTBOX FDSOI high-k metal gate technology
Document Type
Conference
Author
Ben Akkez, I.; Fenouillet-Beranger, C.; Cros, A.; Perreau, P.; Haendler, S.; Weber, O.; Andrieu, F.; Pellissier-Tanon, D.; Abbate, F.; Richard, C.; Beneyton, R.; Gouraud, P.; Margain, A.; Borowiak, C.; Gourvest, E.; Bourdelle, K.K.; Nguyen, B.Y.; Poiroux, T.; Skotnicki, T.; Faynot, O.; Balestra, F.; Ghibaudo, G.; Boeuf, F.
Source
Proceedings of Technical Program of 2012 VLSI Technology, System and Application VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on. :1-2 Apr, 2012
Subject
Language
ISSN
1524-766X
1930-8868
1930-8868
Abstract
All these results show mainly the effectiveness of 45° rotated substrate enabling an increase of mobility performance for PMOS as compared to not rotated substrate. For NMOS devices, combined access resistance and mobility improvements explain the performance gain for rotated substrate.