학술논문
2.16µm Back Side Illuminated Voltage Domain Global Shutter CMOS Image Sensor with single silicon layer pixel
Document Type
Conference
Author
Source
2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023
Subject
Language
ISSN
2156-017X
Abstract
We present the smallest 2.16µm pitch voltage domain global shutter pixel built on a single silicon layer. A novel and very compact pixel architecture is used along a very dense front-end capacitor integration. Leading to the smallest sensor size for the given 800x700 resolution. This pixel is associated to a logic circuit through 3D Cu-to-Cu hybrid bonding process providing state-of-the-art on-chip data processing and interface. Good performance trade-off is achieved with high QE and spatial resolution. Noise figures are also remarkable, allowing up to 90dB linear dynamic range in a single frame using spatially split exposure mode.