학술논문
Totally Silicided (TOSI) Gates as an evolutionary metal gate solution for advanced CMOS technologies
Document Type
Conference
Author
Source
2006 IEEE International Conference on IC Design and Technology Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on. :1-6 2006
Subject
Language
ISSN
2381-3555
Abstract
In this paper, we show that TOtally SIlicided (TOSI) gate electrodes offer an interesting and industrially viable option for the integration of metal gate electrodes in advanced CMOS technologies as their integration requires only few modifications with respect to a CMOS standard flow. Moreover, the use of NiSi gives access to an electrode with a tunable mid-gap work function. The potential of TOSI-gate devices is demonstrated by integration and device results including fully operational SRAM cells and reliability data.