학술논문

Recent advances in 3D VLSI integration
Document Type
Conference
Source
2016 International Conference on IC Design and Technology (ICICDT) IC Design and Technology (ICICDT), 2016 International Conference on. :1-4 Jun, 2016
Subject
Components, Circuits, Devices and Systems
Annealing
Silicon
Three-dimensional displays
Logic gates
MOSFET
3D VLSI integration
Low temperature process
Laser anneal
Junctions
Low-k spacers
NiCo silicide
Language
Abstract
This work highlights recent advances in 3D VLSI integration. A review of low temperature process modules development such as junctions, spacers and salicidation is presented. Finally, for the first time, a full CMOS over CMOS 3D VLSI integration on 300mm wafers is demonstrated with a top level compatible with state of the art high performance FDSOI (Fully-Depleted Silicon On Insulator) process requirements such as High-k/metal gate or raised source and drain.