학술논문
High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor
Document Type
Conference
Author
Yang, B.; Takalkar, R.; Ren, Z.; Black, L.; Dube, A.; Weijtmans, J.W.; Li, J.; Johnson, J.B.; Faltermeier, J.; Madan, A.; Zhu, Z.; Turansky, A.; Xia, G.; Chakravarti, A.; Pal, R.; Chan, K.; Reznicek, A.; Adam, T.N.; de Souza, J.P.; Harley, E.C.T.; Greene, B.; Gehring, A.; Cai, M.; Aime, D.; Sun, S.; Meer, H.; Holt, J.; Theodore, D.; Zollner, S.; Grudowski, P.; Sadana, D.; Park, D.-G.; Mocuta, D.; Schepis, D.; Maciejewski, E.; Luning, S.; Pellerin, J.; Leobandung, E.
Source
2008 IEEE International Electron Devices Meeting Electron Devices Meeting, 2008. IEDM 2008. IEEE International. :1-4 Dec, 2008
Subject
Language
ISSN
0163-1918
2156-017X
2156-017X
Abstract
For the first time, embedded Si:C (eSi:C) was demonstrated to be a superior nMOSFET stressor compared to SMT or tensile liner (TL) stressors. eSi:C nMOSFET showed higher channel mobility and drive current over our best poly-gate 45nm-node nMOSFET with SMT and tensile liner stressors. In addition, eSi:C showed better scalability than SMT plus tensile liner stressors from 380nm to 190nm poly-pitches.