학술논문
Self-Heating Effects on Hot Carrier Degradation and its Impact on Ring-Oscillator Reliability
Document Type
Conference
Author
Source
2018 International Integrated Reliability Workshop (IIRW) Integrated Reliability Workshop (IIRW), 2018 International. :01-04 Oct, 2018
Subject
Language
ISSN
2374-8036
Abstract
This paper discusses the impact of self-heating (SH) on ring-oscillator (RO) reliability and its correlation to hot carrier (HC) degradation. We show that HC degradation modulation due to SH is only significant for logic PFETs at highly accelerated conditions. We show that these SH effects on HC are greatly reduced at moderate acceleration. By stressing the ROs at extreme conditions, we show that the SH impact on HC does not affect RO degradation.